november 2013 FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 1 FDB38N30U n-channel unifet tm ultra frfet tm mosfet 300 v, 38 a, 120 m features ?r ds(on) = 120 m (max.) @ v gs = 10 v, i d = 19 a ? low gate charge (typ. 56 nc) ?low c rss (typ. 55 pf) ? 100% avalanche tested ?rohs compliant applications ? uninterruptible power supply ? lcd/led/pdp tv ? ac-dc power supply description unifet tm mosfet is fairchild semiconductor?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. unifet ultra frfet tm mosfet has much superior body diode reverse recovery performance. its trr is less than 50nsec and the reverse dv/dt immunity is 20v/nsec while normal planar mosfets have over 200nsec and 4.5v/nsec respectively. therefore unif et ultra frfet mosfet can remove additional component and improve system reliability in certain applications that require performance improvement of the mosfet?s body diode. this dev ice family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. g s d d 2 -pak g s d mosfet maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FDB38N30U unit v dss drain to source voltage 300 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t - continuous (t c = 25 o c) 38 a - continuous (t c = 100 o c) 22.8 i dm d r a i n c u r r e n t - p u l s e d (note 1) 152 a e as single pulsed avalanche energy (note 2) 722 mj i ar avalanche current (note 1) 38 a e ar repetitive avalanche energy (note 1) 31.3 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 313 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FDB38N30U unit r jc thermal resistance, junction to case, max. 0.4 o c/w r ja thermal resistance, junction to ambi ent, max. 62.5
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics part number top mark package packing method reel size tape width quantity FDB38N30U FDB38N30U d 2 -pak tape and reel 330 mm 24 mm 800 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v, t j = 25 o c300 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.33 - v/ o c i dss zero gate voltage drain current v ds = 300 v, v gs = 0 v - - 25 a v ds = 240 v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 3.0 - 5.0 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 19 a - 0.103 0.120 g fs forward transconductance v ds = 20 v, i d = 19 a - 30 - s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz - 2510 3340 pf c oss output capacitance - 470 625 pf c rss reverse transfer capacitance - 55 85 pf q g(tot) total gate charge at 10v v ds = 240 v, i d = 38 a v gs = 10 v (note 4) -5673nc q gs gate to source gate charge - 14 - nc q gd gate to drain ?miller? charge - 24 - nc t d(on) turn-on delay time v dd = 150 v, i d = 38 a, v gs = 10 v, r g = 25 (note 4) -3376ns t r turn-on rise time - 80 170 ns t d(off) turn-off delay time - 133 276 ns t f turn-off fall time - 62 134 ns i s maximum continuous drain to source diode forward current - - 38 a i sm maximum pulsed drain to source diode forward current - - 152 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 38 a - - 1.4 v t rr reverse recovery time v gs = 0 v, i sd = 38 a, di f /dt = 100 a/ s -60-ns q rr reverse recovery charge - 0.097 - c notes: 1: repetitive rating: pulse-width limited by maximum junction temperature. 2: l = 1 mh, i as = 38 a, v dd = 50 v, r g = 25 , starting t j = 25c. 3: i sd 38 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25c. 4: essentially independent of operating temperature typical characteristics.
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 0.1 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 2345678910 1 10 100 200 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 20406080100 0.08 0.12 0.16 0.20 0.24 0.26 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.00.40.81.21.6 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 30 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 *note: i d = 38a v ds = 60v v ds = 150v v ds = 240v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature figure 9. maximum drain current figure 10. unclamped inductive vs. case temperature switching capability figure 11. transient thermal response curve -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 1 10 100 500 0.1 1 10 100 300 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 10 20 30 40 v gs = 10v i d , drain current [a] t c , case temperature [ o c] r jc = 0.4 o c/w 0.001 0.01 0.1 1 10 100 1 10 100 t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) 10 -5 10 -4 10 -3 10 -2 10 -1 1 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec]
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 5 figure 12. gate charge test circuit & waveform figure 13. resistive switch ing test circuit & waveforms figure 14. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 6 figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB38N30U ? n-channel unifet tm ultra frfet tm mosfet ?2012 fairchild semiconductor corporation FDB38N30U rev. c1 www.fairchildsemi.com 7 mechanical dimensions figure 16. to263 (d 2 pak), molded, 2-lead, surface mount package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt263-002
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